AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Thursday Sessions
       Session GR+AS+TF+MI-ThA

Paper GR+AS+TF+MI-ThA8
Spectroscopic Ellipsometry for Thickness Measurement and Optical Dispersion Modeling of CVD-Grown Graphene

Thursday, October 21, 2010, 4:20 pm, Room Brazos

Session: Graphene: Surface Characterization
Presenter: A.C. Diebold, The University at Albany-SUNY
Authors: F.J. Nelson, The University at Albany-SUNY
V.K. Kamineni, The University at Albany-SUNY
A.C. Diebold, The University at Albany-SUNY
Correspondent: Click to Email
Graphene has attracted much research over the past several years due to its electrical and mechanical properties. It is a prime candidate for electronic and optoelectronic devices, yet much of the research has utilized the exfoliation, or "scotch-tape" technique of sample preparation. More scalable growth methods have been investigated, such as the thermal decomposition of SiC, and the resulting graphene films have properties dependent on their fabrication parameters. One potentially scalable technique is that of hydrocarbon gas-based CVD onto metallic substrates. Here, we report on the ellipsometric measurement of Few-Layer-Graphene (FLG) grown on copper foils and subsequently transferred to a different substrate (i.e. glass). One of the challenges with development of a dispersion model for FLG is that the CVD graphene has many "grains" inside the measured area while previous reports of exfoliated graphene were done on single crystal samples. The work explores finding an average thickness, as well as the optical dispersion modeling, of the graphene layers on different substrates, such as SiO2/Si and glass slides.