| AVS 57th International Symposium & Exhibition | |
| Energy Frontiers Topical Conference | Thursday Sessions |
| Session EN-ThP |
| Session: | Energy Frontiers Topical Conference Poster Session |
| Presenter: | S.-H. Nam, Sungkyunkwan University, Republic of Korea |
| Authors: | S.-H. Nam, Sungkyunkwan University, Republic of Korea M.-H. Kim, Sungkyunkwan University, Republic of Korea S. Kim, Paichai University, Republic of Korea B. Hong, Sungkyunkwan University, Republic of Korea J.-H. Boo, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Zinc oxide (ZnO) films have been investigated in recent years as transparent conducting oxide layers, because of their good electrical and optical properties in combination with large band gap, abundance in nature, and absence of toxicity. Zinc oxide thin films were prepared at deposition thickness in the range of 50 nm to 150 nm by RF magnetron sputtering on glass substrates with pure zinc oxide target. The crystallinity nanostructure and surface morphology of zinc oxide thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM). As the thickness of the films increased, the grain size and surface roughness increased. Also, we studied the optical-electrical properties of the zinc oxide thin films such as carrier concentration, mobility, and resistivity by hall measurement. As changed by thickness of zinc oxide thin films, concentration become increasing. But mobility and resistivity become decreasing.