| AVS 56th International Symposium & Exhibition | |
| Graphene Topical Conference | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | GR+AS-WeA1 Invited Paper Tuning the Properties of Dirac Fermions in Graphene A. Lanzara, University of California, Berkeley |
| 2:40pm | GR+AS-WeA3 Invited Paper Growth of Semiconducting Graphene on Pd(111) S. Kodambaka, S.-Y. Kwon, University of California, Los Angeles, C.V. Ciobanu, Colorado School of Mines, V. Petrova, J. Bareno, University of Illinois, V.B. Shenoy, Brown University, V. Gambin, Northrop Grumman Space and Technology, I. Petrov, University of Illinois |
| 4:00pm | GR+AS-WeA7 Electronic Corrugation of Rippled Graphene Grown on Ru(0001) B. Borca, S. Barja, Universidad Autonoma de Madrid, Spain, M. Garnica, IMDEA Nanociencia, Spain, J.J. Hinarejos, Universidad Autonoma de Madrid, Spain, A.L. Vazquez de Parga, R. Miranda, UAM & IMDEA Nanociencia, Spain |
| 4:20pm | GR+AS-WeA8 Mapping the Geometric and Electronic Structures of Epitaxial Graphene B. Wang, M. Caffio, R. Schaub, University of St Andrews, UK |
| 4:40pm | GR+AS-WeA9 Rotational Domains of Graphene on Ir(111) S. Nie, E. Loginova, K. Thürmer, N.C. Bartelt, K.F. McCarty, Sandia National Laboratories |
| 5:00pm | GR+AS-WeA10 Deposition and Characterization of HfO2, Al2O3 and SiO2 Dielectrics for Graphene-Based Devices A. Pirkle, University of Texas at Dallas, L. Colombo, Texas Instruments Incorporated, R.M. Wallace, University of Texas at Dallas |
| 5:20pm | GR+AS-WeA11 Large Area Graphene Formed by the Catalytic Exfoliation of Natural Graphite with Invar Alloy J.C. Sung, KINIK Company, Taiwan, K. Chang, K. Hsu, National Taipei University of Technology, Taiwan, M. Sung, Advanced Diamond Solutions, Inc. |