| AVS 56th International Symposium & Exhibition | |
| Applied Surface Science | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | AS+EM+MS+TF-TuM1 Optical Characterization of Plasma-Deposited SiO2-like Layers on Anisotropic Polymeric Substrates G. Aresta, Eindhoven Univ. of Tech., The Netherlands, A.P. Premkumar, Materials Innovation Inst. (M2i), The Netherlands, S.A. Starostin, Eindhoven Univ. of Tech., The Netherlands, H. de Vries, FUJIFILM Mfg Europe B.V, The Netherlands, M.C.M. van de Sanden, M. Creatore, Eindhoven Univ. of Tech., The Netherlands |
| 8:20am | AS+EM+MS+TF-TuM2 Spectroscopic Ellipsometry in the Mid IR and UV-VIS for Investigating Low Temperature Plasma Activated Wafer Bonding T. Plach, K. Hingerl, University Linz, Austria, V. Dragoi, M. Wimplinger, EV Group, Austria |
| 8:40am | AS+EM+MS+TF-TuM3 Invited Paper Applications of Ellipsometry and Polarimetry to Real-Time Analysis and Control of Epitaxial Growth D.E. Aspnes, North Carolina State University and Kyung Hee University, Korea |
| 9:20am | AS+EM+MS+TF-TuM5 Spectroscopic Ellipsometric Sudy of Phase-Change Materials for Data Storage Applications E. Gourvest, STMicroelectronics, France, C. Vallée, LTM - CNRS/UJF/INPG, France, S. Lhostis, STMicroelectronics, France, Ch. Licitra, A. Roule, CEA - LETI, France, B. Pelissier, LTM - CNRS/UJF/INPG, France, S. Maitrejean, CEA - LETI, France |
| 9:40am | AS+EM+MS+TF-TuM6 VUV Optical Properties of III-Nitrides in the Thin Film Limit C. Cobet, M. Röppischer, C. Werner, Institute for Analytical Sciences, Germany, R. Goldhahn, Ilmenau University of Technology, Germany, N. Esser, Institute for Analytical Sciences, Germany |
| 10:40am | AS+EM+MS+TF-TuM9 Parameterization of the Optical Function of Hydrogenated Amorphous Carbon by Means of B-splines J.W. Weber, T.A.R. Hansen, M.C.M. van de Sanden, R. Engeln, Eindhoven University of Technology, The Netherlands |
| 11:00am | AS+EM+MS+TF-TuM10 Characterization of P3HT Anisotropic Thin Films with Spectroscopic Ellipsometry J.N. Hilfiker, J. Sun, T.E. Tiwald, G.K. Pribil, J.A. Woollam Co., Inc. |
| 11:20am | AS+EM+MS+TF-TuM11 Analysis of CdTe and CdS Thin Films and Photovoltaic Device Structures by Spectroscopic Ellipsometry M.N. Sestak, J. Li, J. Chen, C. Thornberry, D. Attygalle, R.W. Collins, University of Toledo |
| 11:40am | AS+EM+MS+TF-TuM12 Synergism of Ellipsometric Porosimetry with Other Complementary Characterization Techniques for Process Control of Ultra Low k Dielectric Films A. Madan, N. Klymko, IBM, D. Kioussis, GLOBALFOUNDRIES, G. Dubois, L. Tai, M. Chace, D. Restaino, J. Protzman, IBM |