AVS 56th International Symposium & Exhibition
    Thin Film Monday Sessions
       Session TF1-MoM

Paper TF1-MoM8
Cubic and Wurtzite Sc1-xAlxN Solid Solutions Grown by Reactive Magnetron Sputter Epitaxy onto ScN (111) and AlN(0001) Seed Layers

Monday, November 9, 2009, 10:40 am, Room B3

Session: Thin Films: Growth and Characterization I
Presenter: C. Höglund, Linköping University, Sweden
Authors: C. Höglund, Linköping University, Sweden
J. Bareño, Argonne National Laboratory
J. Birch, Linköping University, Sweden
B. Alling, Linköping University, Sweden
Z. Czigány, Hungarian Academy of Sciences, Hungary
L. Hultman, Linköping University, Sweden
Correspondent: Click to Email

Reactive magnetron sputter epitaxy was used to grow thin solid films of Sc1-xAlxN (0 ≤ x ≤ 1) onto ScN(111) and AlN(0001) seed layers at substrate temperatures of 600ºC and 800°C, respectively. The films were analyzed by Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and transmission electron microscopy (TEM). RBS and ERDA showed that stoichiometric films were obtained in the entire composition range (molar fractions x = 0, 0.14, 0.29, 0.51, 0.73, 0.90, 1.0) using elemental Sc and Al targets and N2 as the reactive gas. TEM and XRD show that rocksalt structure (c) Sc1-xAlxN(111) solid solutions can be epitaxially grown onto the isostructural c-ScN(111) seed layers with AlN molar fractions up to x ~ 0.6 , whereafter the system phase separates into c- and wurtzite structure (w) Sc1-xAlxN. Upon phase separation, the w-domains are present in three different orientations relative to the seed layer, namely Sc1-xAlxN(0001) || ScN(111) with Sc1-xAlxN[-12-10] || ScN[1-10], Sc1-xAlxN(10-11) || ScN(111) with Sc1-xAlxN[-12-10] || ScN[1-10], and Sc1-xAlxN(10-11) || ScN(113). When growth was performed onto w-AlN(0001) seed layers, epitaxial w-Sc1-xAlxN(0001) with AlN molar fractions x in the range ~0.50 to 1.00 were obtained. For AlN molar fractions of 0.28 and less, the film formed an epitaxial c-Sc1-xAlxN(111) phase with double position domains.

The lattice parameter for the c-Sc1-xAlxN films closely followed the values predicted by first principles density functional theory calculations, only slightly deviating from Vegard’s law. On the contrary, the lattice parameters of the w-Sc1-xAlxN varied considerably less than predicted. Our calculated mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions predict that the alloy is metastable with respect to phase separation for all temperatures below the melting points of AlN and ScN.