AVS 56th International Symposium & Exhibition
    Surface Science Thursday Sessions
       Session SS2-ThM

Paper SS2-ThM12
From Self-Assembled Monolayers to 1 nm Thin Conducting Carbon Nanosheets

Thursday, November 12, 2009, 11:40 am, Room N

Session: Electron Activated Molecular Interfaces
Presenter: A. Turchanin, University of Bielefeld, Germany
Authors: A. Turchanin, University of Bielefeld, Germany
A. Beyer, University of Bielefeld, Germany
Ch.T. Nottbohm, University of Bielefeld, Germany
X. Zhang, University of Bielefeld, Germany
R. Stosch, PTB-Braunschweig, Germany
A. Sologubenko, University of Aachen, Germany
J. Mayer, University of Aachen, Germany
P. Hinze, PTB-Braunschweig, Germany
T. Weimann, PTB-Braunschweig, Germany
A. Gölzhäuser, University of Bielefeld, Germany
Correspondent: Click to Email

Whereas the fabrication of free-standing 0D and 1D nanomaterials like clusters, nanoparticles, nanowires, nanotubes etc. is well established at present, the fabrication of free-standing 2D materials with atomic thicknesses is not routine. In this contribution we present a route for the fabrication of novel ultrathin (~1 nm) free-standing carbon nanosheets with adjustable sizes based on molecular self-assembly. Self-assembled monolayers (SAM) of aromatic biphenyl molecules are first cross-linked by electrons [1]. Vacuum pyrolysis of the cross-linked films transforms them into a mechanically stable and conductive 2D graphitic phase consisting of nanosize graphene patches [2, 3]. Resistivity and stiffness can be tuned by the annealing temperature [3]. The transition from insulator to conductor (~100 kΩ/sq) is characterized by a variety of complementary spectroscopic and microscopic techniques (Raman Spectroscopy, XPS, UPS, NEXAFS, TDS, HTEM, STM, AFM). A plethora of applications of this novel material is visible taking advantage of the fact that size, shape, and resistivity of the nanosheets in supported and suspended states (nanomembranes) are easily controlled.

[1] W. Geyer, V. Stadler, W. Eck, M. Zharnikov, A. Gölzhäuser, M. Grunze, Appl. Phys. Lett. 75, 2401 (1999)

[2] A. Turchanin, M. El-Desawy, A. Gölzhäuser, Appl. Phys. Lett., 90, 053102 (2007)

[3] A. Turchanin, A. Beyer, Ch. T. Nottbohm, X. Zhang, R. Stosch, A. Sologubenko, J. Mayer, P. Hinze, T. Weimann, A. Gölzhäuser, Adv. Mater. 21, 1233 (2009)