AVS 56th International Symposium & Exhibition
    Surface Science Thursday Sessions
       Session SS1-ThA

Paper SS1-ThA9
Growth of Iridium on Ge(111) Studied by STM and LEEM

Thursday, November 12, 2009, 4:40 pm, Room M

Session: Nucleation and Growth - Metals
Presenter: C. Mullet, University of California, Davis
Authors: C. Mullet, University of California, Davis
S. Chiang, University of California, Davis
J. Morad, University of California, Davis
A. Durand, University of California, Davis
Correspondent: Click to Email
Iridium on germanium is a system which is useful for understanding the interaction of 5d metals with semiconductors, with potential applications to electronic contacts. We have used both scanning tunneling microscopy (STM) and low energy electron microscopy (LEEM) to characterize the submonolayer growth of iridium onto Ge(111) as a function of coverage, deposition temperature, and annealing temperature. Ir deposited onto the Ge(111) c(2x8) surface forms a (√3x√3)R30º phase with the island size dependent upon substrate temperature during deposition. Deposition at a sample temperature of 670 C yields large micron-sized regions of continuous (√3x√3)R30º coverage, as seen by LEEM. Deposition at 400 C produces Ir islands of three different sizes, all of which are too small to be resolved in LEEM but can be easily observed in room temperature STM images: large islands of roughly 10 to 20 nm diameter, consisting of multiple layers; medium-sized islands of roughly 4 nm in diameter, and small islands about 1 nm in diameter. The medium sized islands show a preference for growing at the bottom edges of steps. The small islands show a nearly uniform distribution on the sample surface, with the interesting exception of preferentially ordering in arrays of lines connecting medium-sized islands. Heating the sample over 640 C yields islands of large enough size to be resolved with LEEM, with the island size dependent upon annealing temperature. Ostwald ripening was observed in LEEM movies. When these large islands form during sample heating, they appear to ‘avoid’ areas of high step density near surface defects. At 840 C, desorption begins from these types of regions.