AVS 56th International Symposium & Exhibition
    Surface Science Thursday Sessions
       Session SS-ThP

Paper SS-ThP2
Surface Passivation by Sb Adsorption: Sb/Si(114)-2 × 2

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Surface Science Poster Session
Presenter: J.M. Seo, Chonbuk National University, Republic of Korea
Authors: O. Dugerjav, Chonbuk National University, Republic of Korea
H. Kim, Chonbuk National University, Republic of Korea
G. Duvjir, Chonbuk National University, Republic of Korea
H. Li, Chonbuk National University, Republic of Korea
J.M. Seo, Chonbuk National University, Republic of Korea
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Sb adsorption on the Si(114)-2×1 surface [composed of dimer (D), rebonded-atom (R), tetramer (T) rows] at 600 ℃ has been investigated by STM and synchrotron photoemission spectroscopy (PES). When the Sb coverage exceeds 0.25 ML, two periods of 2×1 [(D-R-T)-(D-R-T)] is transformed to 2×2 [D-R-D-R-RSb-D-RSb, where RSb means an R row replaced by deposited Sb atoms]. Such a transformation turns out to be nanofaceting to 2×(115) and 2×(113) and is originating from the stress balance between the tensile rebonded DB-type D(6)-R(5)-D(6)-R(5) rings [Phys. Rev. Lett. 77, 687 (1996)] and the compressive RSb(5)-D(7)-RSb(5) rings [Sur. Sci. 411, 54 (1998)]. This Sb-adsorbed 2×2 surface has 37.5% less dangling bonds and 0.27 eV less band-bending than the clean surface. It has been found that the addimer adsorbs exclusively on the D(7)-RSb(5) ring site, which implies that the critical condition for addimer adsorption is the relative angle between dangling bonds of D(7)-RSb(5) rings.