| AVS 56th International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS1-WeM |
| Session: | Plasma Diagnostics, Sensors, and Control I |
| Presenter: | J.-H. Kim, Korea Research Institute of Standards and Science (KRISS) |
| Authors: | J.-H. Kim, Korea Research Institute of Standards and Science (KRISS) K. Rho, KAIST, South Korea Y.-S. Yoo, KRISS, South Korea S.-J. You, KRISS, South Korea D.-J. Seong, KRISS, South Korea Y.-H. Shin, KRISS, South Korea |
| Correspondent: | Click to Email |
The behaviors of CF and CF2 radicals were studied in CF4 inductively coupled plasma. CF and CF2 radicals were measured using a laser-induced fluorescence method [1,2]. Absolute electron density was measured using a cutoff probe [3], and the electron temperature was measured using a Langmuir probe to study relation between the electron property and radicals. CF and CF2 densities are drastically changed by variations of operating pressure, ratio of mixed gases and RF source power. To examine the relation between electron density and CF and CF2 radicals, CF, CF2 radical and electron density were measured as varying the RF power which is a major external parameter influencing to the electron density. As the RF power was increased, CF and CF2 radical density increased in the range of low electron density and then decreased over a critical electron density. Dependence of CF and CF2 radical density on the electron density was theoretically analyzed with rate equations. The theoretically analyzed relation between the electron density and the radical density was in good agreement with the experimental result.
[1] G. Cunge, P. Chabert and J.P. Booth, J. Appl. Phys. V89, p7750 (2001)
[2] S. Hayashi, K. Kawashima, M. Ozawa, H. Tsuboi, T. Tatsumi, and M. Sekime, Sci. and Tech. Adv. Mat. V2, p555 (2001)
[3] J.H.Kim, D.J.Seong, J.Y.Lim, and K.H.Chung, Appl. Phys. Lett. V83, p4725 (2003)
[4] J.H.Kim, K.H. Chung and Y-S Yoo, J. Korean Phys. Society. V47, p249 (2005)