| AVS 56th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | J.K. Hong, Sungkyunkwan University, Korea |
| Authors: | J.K. Hong, Sungkyunkwan University, Korea K.H. Kim, Sungkyunkwan University, Korea J.H. Heo, Sungkyunkwan University, Korea I.S. Jung, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
The vertical Si nanowires were grown on Si(100) substrate using a low-pressure chemical vapor deposition(LPCVD) system. The square pattern of AAO was obtained by combining pre-patterning Al thin film surface using focused ion beam (FIB) with anodizing process. The pore size and its period of the square matrix were approximately 50nm and 100nm, respectively. To determine the role of the indent depth on Al surface in AAO formation, FIB doses were varied from 1x1017 ions/point to 8x1017 ions/points. We found that a minimum indent depth is about 16nm. The minimum indent depth seems to be required to localize electric fields in a downward direction thereby yielding an indented pattern after AAO formation. In addition, we found that the higher voltage in anodizing process yields better uniformity in pore shapes. The Au nanoparticles as the catalyst for epitaxial growth of Si nanowires were deposited at the bottom of the AAO template on Si substrate using a electroless deposition with a mixuture of a solution containing Au ions and 1% HF. The average diameter of Au nanoparticles in each pore was 65nm.