Invited Paper GR+TF-TuA7
Graphene Electronics and Optoelectronics

Tuesday, November 10, 2009, 4:00 pm, Room C3

Graphene is a single atomic layer, 2-dimensional zero band-gap semiconductor with a high Fermi velocity and a huge electrical mobility approaching 200,000 cm²/V·s for a free sheet. The photonic properties of graphene are equally remarkable: the strength of light-graphene interaction over a very wide range of photon energies is 10 to 100 times stronger than that in conventional semiconductors. These unique properties can be employed in both electronic and photonic applications. In my talk I will discuss the basic device physics, fabrication and operating characteristics of high frequency, single layer graphene transistors. Devices with gain up to 50GHz will be demonstrated. I will also present the physics and device results on single and few layer graphene ultra-high bandwidth photodetectors appropriate for optical communications, imaging and other applications.