AVS 56th International Symposium & Exhibition
    Graphene Topical Conference Monday Sessions
       Session GR+SS-MoA

Paper GR+SS-MoA11
Galvanic Deposition of Au Nanoclusters on Epitaxial Graphene

Monday, November 9, 2009, 5:20 pm, Room C3

Session: Epitaxial Graphene on SiC
Presenter: M. Cerruti, UC Berkeley
Authors: M. Cerruti, UC Berkeley
N. Ferralis, UC Berkeley
R. Maboudian, UC Berkeley
C. Carraro, UC Berkeley
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Metallization of graphene surfaces are of crucial importance for the fabrication of metal-graphene contacts, and for surface functionalization via metallic nanostructures. In this paper, a novel method of selective deposition of Au clusters on graphene layers grown epitaxially on SiC substrate is presented. The size and the distribution of particles is regulated and fully controlled by the deposition process. From a combined use of scanning electron microscopy, x-ray electron spectroscopy and Raman microscopy, we propose that cluster nucleation takes place at the edges and defects in graphene domains, via oxidation of defects sites. The preferred nucleation indicates that a high level of selectivity is achieved by controlling the quality of the graphene film.