| AVS 56th International Symposium & Exhibition | |
| Graphene Topical Conference | Tuesday Sessions |
| Session GR+EM+MS-TuM |
| Session: | Graphene and Carbon-based Electronics |
| Presenter: | W.A. de Heer, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Since 2001 the Georgia Tech epitaxial graphene research team and its collaborators have developed the new field of epitaxial graphene electronics.The current status of epitaxial graphene research will be presented, including the production methods and recent results from various characterization investigations. Methods have been developed to grow continuous multilayerd epitaxial graphene (MEG) on the C-face of hexagonal silicon carbide with of up to 100 graphene sheets and its extraordinary transport properties have been demonstrated.
Surprisingly, the properties of MEG are closely related to monolayer graphene rather than graphite, as a result of an unusual rotational stacking of the graphene layers that causes the graphene sheets to electronically decouple. Consequently the electronic band structure of MEG is composed of Dirac cones. The charge carries are chiral and exhibit a non-trivial Berry 's phase. Weak anti-localization and quantum confinement has been demonstrated. Landau level spectroscopy further exhibits record-breaking room temperature mobilities and well resolved Landau levels below 1 T, indicating extremely low carrier densities and good homogeneity of the material. Efforts towards large scale electronic device patterning will be reviewed.