| AVS 56th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | M. Chen, University of Alabama |
| Authors: | H. V Nampoori, University of Alabama V. Rincon, University of Alabama M. Chen, University of Alabama S. Kotru, University of Alabama |
| Correspondent: | Click to Email |
Transparent conducting oxides (TCO) are the materials which combine visual transparency with high electrical conductivity. TCO films such as Indium Tin oxide (ITO) find its applications in photovoltaics, flat panel displays, electrochromic devices etc. ITO films are commonly grown by sputtering technique and presently meet current needs and quality for device applications. However, to achieve such good quality films, the films are grown at elevated substrate temperatures. This work explores a relatively newer vapor deposition technique known as pulsed electron deposition (PED) for the growth of ITO films where the films are deposited at room temperature. A commercially available target of ITO (90/10) was used as the source material. Films were deposited on soda lime glass and on Si (100) substrates. The oxygen pressure in the chamber during growth was varied from 2.8 mTorr to 22 mtorr. All the films were deposited for 5000 pulses. To evaluate the quality of grown films, various characterization techniques were employed. The optical transparency and the electrical conductivity of the films were found to be improving with increasing Oxygen pressure. Effect of Oxygen chamber pressure on resistivity, surface morphology, optical constants and carrier concentration on the films has been carried out. Details about the film preparation and evaluation of film properties will be presented.