| AVS 56th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | W.-C. Chen, National Applied Research Laboratories, Taiwan |
| Authors: | W.-C. Chen, National Applied Research Laboratories, Taiwan C.N. Hsiao, National Applied Research Laboratories, Taiwan D.P. Tsai, National Applied Research Laboratories and National Taiwan University |
| Correspondent: | Click to Email |
Wurtzute InN films were prepared on 6H-SiC substrate by self-designed plasma-assisted metal-organic molecule beam epitaxy system without buffer layer. In our report, we discussed the effects of substrate temperature on structural and optical properties of InN films. The crystalline and microstructure of the thin film was further characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), respectively. Electrical and optical properties were evaluated by Hall and photoluminescence (PL) measurements. XRD results indicated that InN films were polycrystalline and preferential grown along c-axis orientation. Two-dimensional growth mode was clearly shown from SEM images. However, cracks due to the lattice and mainly large thermal expansion coefficient mismatch were observed as well. Cross-sectional TEM images revealed that the InN films were grown continuously from the 6H-SiC substrate, and c-axis lattice constant was about 0.57 nm. Room-temperature PL spectra showed the emission peak is located at ~ 0.83 eV and sheet carrier concentrations is 7.9 × 1015 cm-2. It was found that the optoelectronic properties and crystalline quality can be improved significantly by optimizing growth temperatures.