Paper TF-ThM9
Low Temperature Growth of High-Quality Indium Nitride on Si(100) by Femtosecond Pulsed Laser Deposition

Thursday, October 23, 2008, 10:40 am, Room 302

The growth and structural properties of indium nitride (InN) grown on Si(100) substrates by femtosecond pulsed laser deposition (fsPLD) are studied. Deposition InN on Si(100) is performed with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm. Laser induced gas breakdown-assisted PLD is used to generate reactive nitridation from ammonia. Prior to InN growth, an intermediate two-dimensional layers of indium on Si(100) surface at substrate temperature of ~70 ^oC is performed by fsPLD under ultrahigh vacuum (low 10^-9 Torr). In situ reflection high-energy electron diffraction (RHEED) is used during the deposition to monitor the structure and morphology of the film growth. The InN films are prepared at room temperature to a substrate temperature of ~350 ^oC. The grown films are examined by ex situ atomic force microscopy, scanning electron microscopy, and x-ray diffraction (XRD). RHEED and XRD analysis showed high-quality InN films grown on Si(100). The quality and structural properties of the InN films are improved by employing a low-temperature buffer layer and by the nitridation process. RHEED observation showed that InN grew on Si(100)-(2x1) surface by the Stranski-Krastanov mode. The growth mode and morphology of the InN films is influenced by the surface condition of Si(100) substrate. The kinetic effect of the PLD has a main rule in improving the initial layers and the formation of InN. The obtained results demonstrate the potential of the growth procedure for deposition of high quality InN epitaxial layers by fsPLD at reduced temperatures.