AVS 55th International Symposium & Exhibition
    Surface Science Wednesday Sessions
       Session SS1+NC-WeM

Paper SS1+NC-WeM11
Influence of Si Deposition on the Phase Transition Temperature of Si(111)-7x7

Wednesday, October 22, 2008, 11:20 am, Room 208

Session: Surface Structure and Morphology
Presenter: H. Elsayed-Ali, Old Dominion University
Authors: I.A. El-Kholy, Old Dominion University
H. Elsayed-Ali, Old Dominion University
Correspondent: Click to Email

Reflection high-energy electron diffraction (RHEED) during the Si(111)-(1x1)h to (7x7) phase transition shows that Si deposition lowers the transition temperature. A Ti-sapphire laser (100 fs, 800 nm, 1 kHz) was used to ablate a Si target on Si(111)-(1x1)h during quenching from high temperature. To measure the transition temperature during quenching with and without Si deposition, the experiment was performed as follows: Initially, in the absence of the laser ablation plume, the Si(111) was kept at a temperature above the phase transition temperature to ensure the uniformity of the temperature throughout the surface area of the sample. The heating current was switched off and the RHEED pattern was recorded. Then, in the presence of Si laser ablation plume, the sample was kept at the same high temperature as was done without an ablation plume. The RHEED intensity was observed as the substrate was exposed to the Si plume and the Si(111) substrate was quenched at a rate of ~40°C/s. The RHEED patterns when the Si plume was present showed a shift in the transition temperature from 840°C without the plume to 820°C with the plume. We interpret this result based on the effect of adatom mobility on the nucleation of the (7x7) structure. In the vicinity of the transition temperature, the two phases coexist on the surface. When the surface temperature is lowered below the transition temperature, the reconstruction starts to grow at the step edges then expand across the terraces. Since the high temperature (1x1)h phase has higher density than the (7x7), the excess atoms, found on large terraces after quenching, are released when the lower density (7x7) is formed. The quenching process results in the cooling of the surface at a lower rate than the time needed for adatoms to diffuse across the terraces; consequently the adatoms are trapped on the surface forming secondary (7x7) nuclei on terraces, thus reducing the observed (1x1)h to (7x7) transition temperature.