| AVS 55th International Symposium & Exhibition | |
| Surface Science | Thursday Sessions |
| Session SS-ThP |
| Session: | Poster Session |
| Presenter: | C. Struck, University of Illinois |
| Authors: | C. Struck, University of Illinois D.N. Ruzic, University of Illinois R.L. Bristol, Intel Corp. |
| Correspondent: | Click to Email |
As lithographic feature sizes continue to increase, the phenomena of line edge roughness (LER) becomes more pronounced. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to achieve acceptable results. We report on one such technique employing the use of an ion beam at grazing incidence unidirectional with the features. One key potential advantage of this approach over many other smoothing techniques is the ability to smooth LER at relatively long spatial length scales over large sections of, or whole wafers. LER reduction numbers are reported at both short and long spatial wavelengths using Ne, He, and Ar beams. The angle of incidence is varied, as well as ion energy, and process time. LER measurements are taken from top-down analytical SEM measurements and Hitachi image analysis software. Line profile data are taken with the SEM in cross-section mode. Tests have achieved a reduction in LER from 9.8±0.67nm to 5.5±0.86nm for 45nm CDs using an Ar beam at 500eV for 6s at an 85˚ angle of incidence. A reduction from 10.1±1.07 nm to 6±1.02 nm was shown using an Ar beam at 1000eV for 4s at a 60˚ angle of incidence.