| AVS 55th International Symposium & Exhibition | |
| Surface Science | Thursday Sessions |
| Session SS-ThP |
| Session: | Poster Session |
| Presenter: | P.R. Scott, University of Missouri-Kansas City |
| Authors: | P.R. Scott, University of Missouri-Kansas City D.M. Wieliczka, University of Missouri-Kansas City |
| Correspondent: | Click to Email |
Thin films were deposited onto Aluminum and Silicon substrates utilizing DC PECVD of Trimethylsilane. The process parameters of gas pressure, discharge voltage, discharge current and deposition time were varied. The films were analyzed using X-ray photoelectron spectroscopy in conjunction with argon ion etching to determine the chemical properties as a function of film thickness and to examine the film-substrate interaction. Spectroscopic ellipsometry was used to obtain the optical properties and film thickness. Results from the comparison and correlation of these film properties to the process parameters will be presented.