AVS 55th International Symposium & Exhibition
    Advanced Surface Engineering Thursday Sessions
       Session SE-ThP

Paper SE-ThP14
Surface of Pb1-xSnxTe Films by Pulsed Laser Deposition

Thursday, October 23, 2008, 6:00 pm, Room Hall D

Session: Advanced Surface Engineering Poster Session
Presenter: M. Zapata-Torres, CICATA-IPN, México
Authors: M. González-Alcudia, CICATA-IPN, México
M. Meléndez-Lira, CINVESTAV-IPN, México
O. Calzadilla-Amaya, Universidad Habana, Cuba
M. Zapata-Torres, CICATA-IPN, México
Correspondent: Click to Email

The interest in pulsed deposition was tirggered by the observation that PLD is superior to thermal deposition in inducing layer by layer growth of heteroepitaxial metal films. We present the design of a pulsed laser deposition modified system ( PLD-M ) which is suitable for materials engineering work. Various concepts in growth structure of Pb1-xSnxTe films for PLD-M have been pursued to optimize its performance. A macroscopic description of growth insatabilitiesn of Pb1-xSnxTe films is usually presented in the framework of only 2D nucleation, determined by the supersaturation, limited interlayer mass transport results in nucleation on top of 2D islands before completion of a film layer. Extensive measurements ( AFM, XRD and SEM ) were carried out to test the micro structural characteristics of the Pb1-xSnxTe films. In the case of PLD-M, a typical value for the deposition rate within one pulse is of the order of 10 mm/s and the radius of droplets formed during single pulse irradiation is the r KH ≈ 0.05 μm. These new approaches offer new possibilities for further development of the field in close connection with surface science and materials science.