AVS 55th International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP20
Fabrication and Characterization of One-Dimensional Semiconducting Nanowire That Use AAO

Tuesday, October 21, 2008, 6:30 pm, Room Hall D

Session: Poster Session
Presenter: K.H. Kim, Sungkyunkwan University, Korea
Authors: K.H. Kim, Sungkyunkwan University, Korea
N.Y. Kwon, Sungkyunkwan University, Korea
J.K. Hong, Sungkyunkwan University, Korea
I.S. Chung, Sungkyunkwan University, Korea
Correspondent: Click to Email

In this study, we attempted to fabricate and characterize one dimensional semiconducting nanowire(CdSe, Polypyrrole). It is well known that CdSe is n-type material, whereas polypyrrole is p-type material. The template used in the nanowire growth was AAO(Anodic Aluminum Oxide) template. After forming AAO template on Al foil, the oxidized underlying barrier layer was removed using a cathodic polarization method based on KCL(0.5mol, -5V, 4℃) solution. Then, nanowires with 50nm diameter and 300nm height were grown using the electroplating method. Finally, the nanowires were characterized using SPM(Seiko Instruments, SPA 300HV) by proving the conductive cantilever. I-V characteristics as a function of the temperature gives an activation energy which is useful to understand the conduction mechanism of semiconducting nanowires.