| AVS 55th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Poster Session |
| Presenter: | N.Y. Kwon, Sungkyunkwan University, Korea |
| Authors: | N.Y. Kwon, Sungkyunkwan University, Korea K.H. Kim, Sungkyunkwan University, Korea J.M. Kwon, Sungkyunkwan University, Korea I.S. Chung, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Porous Si templates with various pore patterns were obtained by etching underlying Si using an anodic aluminum oxide (AAO) mask. Si3N4 imprint stamps with a nano size matrix pillar (height : 50 nm) pattern were indented into Al film grown on Si wafer using an oil press method with the force of 5kN·cm-2. After indenting on Al thin film (thickness : 200 nm), we found that the periodic array with 30 nm depth was formed on Al thin film using scanning probe microscopy. The indented Al film was then anodized using two different anodizing conditions, namely, 0.3M oxalic acid of 4°C at 50V and 0.3M sulfuric acid of 10°C at 25V, and these conditions were suitable to define the matrix pore pattern. As pore's size and interval were decided by anodizing conditions, pre-patterning must set to anodizing condition to get regular pattern. We can control the size of pore and the interval of pore by modifying the aforementioned anodizing conditions. Thus, we can achieve a well organized Si porous template by transferring AAO pattern using ICP etcher with 30 W of rf power, 30 mTorr total pressure, 30 SCCM of CF4, and 4 SCCM of O2.