| AVS 55th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Poster Session |
| Presenter: | J.-S. Kao, National Applied Research Laboratories, Taiwan |
| Authors: | K.-Y. Shin, National Tsing Hua University, Taiwan J.-S. Kao, National Applied Research Laboratories, Taiwan K.-C. Leou, National Tsing Hua University, Taiwan C.-H. Tsai, National Tsing Hua University, Taiwan |
| Correspondent: | Click to Email |
Single-walled carbon nanotube (SWCNT) has been considered as an alternative material for nano-devices, such as carbon nanotube field-effect-transistor or nano-sensor. It has been found that the characteristics of the SWCNT-based device are affected by the band gap of the tube, which depends on its diameter and chirality. Preferred diameter growth of single-walled carbon nanotube (SWCNT) by using single crystal sapphire (0001) and sapphire (110-2) substrates is reported. The carbon nanotubes were grown by mono-layered iron catalyst from sapphire substrate and a mixture of methane and hydrogen at 900°C by chemical vapor deposition. Atomic force microscopy revealed that the particle size distribution of catalyst was varied with different orientation sapphire substrate. The micro-Raman spectra exhibited that the radial-breathing mode signals of SWCNTs grown by Fe (1nm) catalyst were shifted with different orientation sapphire substrates. A growth model based on minimum strain theory (i.e. O-lattice theory) and surface tension theory is proposed.