| AVS 55th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Wednesday Sessions |
| Session NS+NC-WeA |
| Session: | Nanoscale Devices and Sensors |
| Presenter: | B. Lim, Atomate Corporation |
| Authors: | B. Lim, Atomate Corporation B. Hunt, Atomate Corporation E. Wong, Atomate Corporation M. Bronikowski, Atomate Corporation S. Jung, Atomate Corporation |
| Correspondent: | Click to Email |
The carbon nanotube field effect transistor [CNTFET] has the potential to deliver functional performance and efficiency that exceed silicon-based power devices by more than an order of magnitude. The high carrier mobility, high power density, high thermal conductivity, and low on-state resistance of the semiconducting single-walled carbon nanotube can result in a significantly smaller device that operates much cooler and consumes less power. Furthermore, new applications not possible with silicon MOSFET devices can be enabled because of unique characteristics of the CNTFET architecture. This talk will cover the innovative architecture of an early proof-of-concept CNTFET developed by Atomate and some of the challenges to commercial success and acceptance.