AVS 55th International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS+NC-TuA

Paper NS+NC-TuA5
Solution Processed ZnO Nanowire and Heterostructure Arrays

Tuesday, October 21, 2008, 3:00 pm, Room 311

Session: Nanowires and Nanosize Effects
Presenter: Y. Tak, POSTECH, Korea
Authors: K. Yong, POSTECH, Korea
Y. Tak, POSTECH, Korea
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We researched an ammonia aqueous solution method for growing well-aligned ZnO nanowire arrays. Uniform ZnO nanowire arrays were grown on the seed layer coated silicon substrates in aqueous solution containing zinc nitrate and ammonia water by hydrothermal process. Synthesized ZnO nanowires were characterized using SEM, TEM, XPS, XRD and PL spectroscopy. Various parameters of ZnO nanowire growth, such as morphology of seed layer, pH, growth temperature, and concentration of zinc salt in aqueous solution were investigated. We also demonstrated the discrete controlled growth of ZnO nanowire length depending on sequential, tailored growth steps. Combining our solution method and general photolithography, we selectively grew ZnO nanowire arrays on patterned silicon substrate. Our concepts on controlled ZnO nanowire growth using a simple solution method would be applicable for various nano-device fabrications. Another part of this presentation is the fabrication of the ZnO nanowire heterostructure arrays. We prepared two kinds of the ZnO nanowire heterostructure, Co3O4/ZnO nanowire array and CdS/ZnO nanowire arrays using solution based deposition technique. Fabricated ZnO nanowire heterostructure arrays were characterized using SEM, TEM, XRD. Photocatalytic and photoelectrochemical property of the ZnO nanowire heterostructure arrays were tested.