| AVS 55th International Symposium & Exhibition | |
| Nanomanufacturing Focus Topic | Wednesday Sessions |
| Session NM+PS+AS-WeA |
| Session: | Nanomanufacturing I: Plasma Processing and Materials |
| Presenter: | J.J. Peterson, Intel Corporation |
| Authors: | J.J. Peterson, Intel Corporation M.A. Rodriguez, University at Albany-SUNY V. Tileli, University at Albany-SUNY M. Sprinkle, Georgia Institute of Technology C. Berger, Georgia Institute of Technology W.A. de Heer, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Although linewidth measurements of patterned graphene nanoribbons using the high resolution (HR) scanning electron microscope (SEM) have been reported in the literature,1 it is known that such measurments are generally destructive to the structures which are being measured. Furthermore, due to the destructiveness of the measurement, the critical dimensions may be changing even as the measurement is being made. For this reason, the atomic force microsope (AFM) and scanning probe microscope (SPM)2 has become an accepted method of linewidth measurement for graphene or hydrogen silsesquioxane (HSQ) on graphene structures, but this methodology is not scaleable to a manufacturing environment. For this reason, it is desired that a more manufacturable method of linewidth measurement may be developed for measurement of critical dimensions of graphene nanostructures. In this talk, we compare linewidth measurements sub-20 nm HSQ/graphene structures using the HR SEM and environmental-SEM (E-SEM) and report that E-SEM measurements will support the necessary resolution to enable linewidth measurements of graphene nanostructures without the damage associated with typical HR scanning electron microscopes. Furthermore, we make a comparison of linewidth measurements using both the SPM and E-SEM and discuss each respective method’s advantages and disadvantages.