| AVS 55th International Symposium & Exhibition | |
| Nanomanufacturing Focus Topic | Wednesday Sessions |
| Session NM+MS+NS+NC-WeM |
| Session: | Beyond CMOS |
| Presenter: | A. MacDonald, University of Texas at Austin |
| Authors: | A. MacDonald, University of Texas at Austin S.K. Banerjee, University of Texas at Austin L.F. Register, University of Texas at Austin M. Gilbert, University of Texas at Austin J.-J. Su, University of Texas at Austin R. Bistritzer, University of Texas at Austin H. Min, University of Texas at Austin |
| Correspondent: | Click to Email |
Graphene is an atomically two-dimensional material which is described by ultra-relativistic quantum mechanics. I will review progress toward graphene-based electronic devices based on both conventional ideas and on the properties of novel broken symmetry states which might be realized when two graphene layers are separated by a nm scale dielectric barrier. The absence of a mass (a gap) in ultra-relativistic quantum mechanics presents a challenge in adopting conventional device physics to this material. I will discuss progress in inducing gaps by making narrow graphene ribbons or by places graphene bilayers in external electric fields. The broken symmetry which might be realized in systems with two separated graphene layers is one in which phase coherence is established spontaneously between separate layers. These states are counterflow superfluids in which current can flow in opposite directions in the two layers without dissipation. I will discuss some ideas for electronic devices based on the properties of these unusual superfluids.