| AVS 55th International Symposium & Exhibition | |
| Nanomanufacturing Focus Topic | Wednesday Sessions |
| Session NM+MS+NS+NC-WeM |
| Session: | Beyond CMOS |
| Presenter: | C. Awo-Affouda, Naval Research Laboratory |
| Authors: | C. Awo-Affouda, Naval Research Laboratory M. Bolduc, Tekna Plasma Systems, Inc. V.P. LaBella, University at Albany-SUNY |
| Correspondent: | Click to Email |
Magnetic semiconductors hold great potential to produced spin based devices with increased functionality and performance. Making Si ferromagnetic via ion implantation of Mn will aid in integrating such devices with conventional semiconductor manufacturing. Although observations room temperature ferromagnetic phases in Mn-doped Si have been reported by several groups, the origin of the ferromagnetism remains elusive.1-3 We investigate the influence of annealing on the lattice disorder and dopant distribution of Mn ion implanted Si samples. These depth profiles reveal a strong influence of annealing temperatures on the magnetization of the samples. Specifically, above 800°C a drastic drop in the Si lattice disorder is observed which is coincident with a decrease in magnetization. Furthermore the correlation of the structural and magnetic properties suggests that the magnetization of the samples originates from Mn atoms located in the least damaged implanted region.4 Finally, analysis of the magnetization of the samples reveals the presence of superparamagnetic phases magnetically active at low temperatures.
1 Bolduc et al., Phys. Rev. B, 71, p.033302 (2005)
2 Yoon et al., J. Magn. Magn. Mater./331, p.693
3 Kwon et al. Solid State Commun., 136, p. 257 (2005)
4 Awo-Affouda et al. J. Vac. Sci. Tech. A, 25, p. 976 (2007).