| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Tuesday Sessions |
| Session GR-TuP |
| Session: | Graphene Poster Session |
| Presenter: | T. Takami, Tohoku University and CREST JST, Japan |
| Authors: | T. Takami, Tohoku University and CREST JST, Japan E. Ikenaga, Japan Synchrotron Radiation Research Institute and CREST JST M. Nihei, Fujitsu Limited and CREST JST, Japan Y. Takakuwa, Tohoku University and CREST JST, Japan |
| Correspondent: | Click to Email |
Multilayer graphene with nano-scale grain size has been formed on mica and silicon (100) surface with a plasma chemical vapor deposition method at the temperatures lower than 700 C from the mixture gas of methane and argon. The plasma was assisted with an irradiation of ultraviolet light to the sample, induced photoelectric effect. The grown nanographene has been confirmed by transmission electron microscopy and core-level X-ray photoemission spectroscopy with synchrotron radiation. The lattice images with transmission electron microscope and the diffraction patterns indicated that nanographene was formed on the substrates. The peak position of C1S band and pai-pai* plasmon loss band on the X-ray photoemission spectra also revealed the growth of graphene.