Invited Paper GR+TF+NC-TuA10
Uniform Transparent and Conducting Solution Processed Graphene Thin Films for Large Area Electronics

Tuesday, October 21, 2008, 4:40 pm, Room 306

The integration of novel materials such as single walled carbon nanotubes and nanowires into devices has been challenging. Similarly, although fundamental research on graphene has been prolific since its discovery, reports on making it technologically feasible for integration into devices have only recently appeared. In this presentation, a solution based method which allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer up to several layers over large areas will be described. The opto-electronic properties can thus be tuned over several orders of magnitude, making them useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics while thicker films behave as graphite-like semi-metals. Controllable p-type doping via exposure to SOCl2 vapor is also demonstrated. Cl doping leads to breakup of symmetry in ambipolar field effect characteristics, providing a route for unipolar devices. In addition, composite graphene/polymer thin film devices exhibiting on/off ratios >10 will also be reported. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.