AVS 55th International Symposium & Exhibition
    Exhibitor Workshops Tuesday Sessions
       Session EW-TuA

Paper EW-TuA1
Deposition Tolerant Langmuir Probe

Tuesday, October 21, 2008, 3:20 pm, Room Exhibit Hall

Session: Exhibitor Workshops
Presenter: M.B. Hopkins, Impedans Ltd.
Authors: D. Gahan, Impedans Ltd.
B. Dolinaj, Impedans Ltd.
M.B. Hopkins, Impedans Ltd.
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In a standard Langmuir probe system the monitoring of plasma parameters during plasma deposition is limited by the effects of probe surface contamination. A number of issues arise: i) A Langmuir probe immersed in the plasma during deposition processes is subjected to the deposition of a layer resulting in a large disturbance of the probe characteristic. Surface contamination changes the work function, resulting in a shift of the probe characteristic and/or in hysteresis in the I-V Characteristic. The formation of dielectric layers causes the slope of the characteristic to become shallow and eventually reduce the current to zero. This problem is addressed in current Langmuir probe systems based on electron or ion cleaning but limits the probe operation to plasma with low deposition rates. ii) A poor ground return path for the electron current causes shifts in the plasma potential. While this problem is addressed in modern probe systems by using a floating reference probe to compensate for low frequency effects, in deposition plasmas the reference electrode cannot be cleaned by electron bombardment and may be become insulating. The poor electron ground return is made worse by insulating coatings on the wall. In order to produce a Langmuir probe that can operate well in deposition plasma we have introduced a high frequency swept probe. The probe attains a dc bias negative relative to the plasma potential and draws a net current close to zero. The probe records the ac IV characteristic or complex impedance of the sheath and determines the plasma parameters. This technique is valid even in the case of a fully insulating layer forming on the probe surface. The probe draws little net current and minimal ground return is required. We show that the plasma to ground sheath capacitance provides sufficient current during the electron collection period. A unique feature of the probe is the ability to attain a bias voltage above the plasma potential even when coated with a non-conducting layer. We show results of the system in an O2/N2 plasma and compare the swept probe with a standard Langmuir probe.