| AVS 55th International Symposium & Exhibition | |
| Energy Science and Technology Focus Topic | Tuesday Sessions |
| Session EN-TuP |
| Session: | Energy Focus Topic Poster Session |
| Presenter: | F. de Moure-Flores, CINVESTAV-IPN, México |
| Authors: | F. de Moure-Flores, CINVESTAV-IPN, México M. Meléndez-Lira, CINVESTAV-IPN, México J.G. Quiñones-Galván, CINVESTAV-IPN, México E. Mota-Pineda, CINVESTAV-IPN, México S. Cerón-Gutiérrez, CINVESTAV-IPN, México A. Hernández-Hernández, Escuela Superior de Fisica Matemáticas-IPN, México M. González-Alcudia, CICATA-IPN Unidad Altamira, México M. Zapata-Torres, CICATA-IPN Unidad Altamira, México C. Davet-Lazos, CINVESTAV-IPN, México M.delaL. Olvera, CINVESTAV-IPN, México |
| Correspondent: | Click to Email |
We present results of the characterization of the structural, electronic and electrical properties of the photovoltaic heterostructure: ITO / CdS:F / CdSTe. The ITO film was deposited by the technique of rf sputtering. The CdS layer was deposited employing chemical bath deposition adding fluorine to increase n-type doping. The top CdSTe layer was deposited by the modified laser ablation technique.1 The motivation to deposit a CdSTe layer, instead just CdTe, is to limit the S interdiffusion at the CdS/CdTe interface in order to improve the characteristics of the interfacial electric field.2 We report the characteristic I vs. V, the spectral response, as well as the efficiency of the photovoltaic heterostructure. These results are correlated with those obtained from the chemical, structural and electronic characterization obtained through EDX and X-ray diffraction and UV-Vis and Raman spectroscopies.
* This work is partially supported by CONACyT-Mexico
1 M. González-Alcudia, A. Márquez-Herrera, M. Zapata-Torres, M. Meléndez-Lira and O. Calzadilla-Amaya, Adv. in Tech. of Mat. And Mat. Proc. J. 9, 81 (2007).
2 M.A. Santana-Aranda, M. Meléndez-Lira, Applied Surface Science, 175-176 (2000) 538-542.