|AVS 55th International Symposium & Exhibition|
|Energy Science and Technology Focus Topic||Tuesday Sessions|
|Presenter:||M. Emziane, Masdar Institute of Science and Technology, UAE|
|Authors:||M. Emziane, Masdar Institute of Science and Technology, UAE
R.J. Nicholas, University of Oxford, UK
|Correspondent:||Click to Email|
We have investigated single-junction and double-junction photovoltaic devices using ternary and quaternary InGaAs(P) semiconductor materials. These were designed and optimized for potential applications in conventional photovoltaics, thermophotovoltaics and concentrator photovoltaics.Different bandgaps were considered for single-junctions, and various bandgap combinations were simulated for the top and bottom cells of the tandem devices where the structure comprises two single-junction cells connected back to back and separated by a middle common contact. For both single and double-junctions, the device structures were modeled and optimized as a function of the doping concentration and thickness of the active layers, and the simulations show that optimum device performance can be achieved by using relatively thin structures and low doping concentrations in the emitter and base layers. The variation of the device performance with the black-body source temperature, incident intensity and operating temperature was also simulated and discussed. Due to the split of the incident spectrum, the bottom cell response is found to be different from that expected for a single-junction cell having the same bandgap. The optimal bandgap combination that delivers the best total efficiency for the tandem device was also determined and the data discussed.