| AVS 55th International Symposium & Exhibition | |
| Energy Science and Technology Focus Topic | Tuesday Sessions |
| Session EN+EM+NS+PS-TuA |
| Session: | Photovoltaics |
| Presenter: | A.J. Hall, University of Illinois at Urbana-Champaign |
| Authors: | A.J. Hall, University of Illinois at Urbana-Champaign D. Hebert, University of Illinois at Urbana-Champaign A. Rockett, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
Very large multigrain copper indium diselenide (CuInSe2) films were grown on gallium arsenide (GaAs) multigrain wafers using a hybrid sputtering/effusion growth process. Scanning electrom microscopy (SEM) morphology shows excellent epitaxial grain growth on the substrate with intimate grain boundary contact. Electron backscatter diffraction analysis shows a crystal misorientation common axis and misorientation angle for a high-angle, non-twin, boundary. Atomic force microscope and transmission electron microscope images are presented which confirm the surface morphology and the atomic intimacy of the grain interface. Kelvin probe force microscopy shows that the grain-boundary has little electrical influence on the film in comparison to other features present in the crystallites. Growth of large multicrystalline or bicrystalline CuInSe2 films allows more careful study of both physical and electrical influence of grain-boundaries on film properties. Current work on the physical influence of a single boundary on film growth is discussed.