Invited Paper EN+EM+NS+PS-TuA1
Thin films, Plasmas and Solar Cells
Tuesday, October 21, 2008, 1:40 pm, Room 203
Session: |
Photovoltaics |
Presenter: |
M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
Correspondent: |
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Solar cells, devices which can convert sunlight directly into electricity by the photovoltaic (PV) effect, is now recognized as one of the options to provide a significant fraction of the energy mix in 2050 to power the world. Presently the PV industry is booming and two important challenges lie ahead: increasing the efficiency of conversion of sunlight into electricity and obtaining the required scale in terms of the surface area produced. The latter requires high throughput processing of solar cells in all its aspects. Increasing the efficiency is scientifically attaining the most attention, but history has shown that more cost reduction can be obtained by improving processes and increasing the scale of the industry. This talk will address both challenges by discussing the role of thin film and plasma technology. Presently the solar cell market is dominated by solar cells based on crystalline silicon. In this solar cell technology, where the photo-active material is wafer based silicon, thin films still play an important role to increase efficiency by effectively passivating bulk and surface defects and enhancing light trapping in the solar cell. The high rate deposition of a-SiNx:H as passivation and anti-reflection coating, by means of the expanding thermal plasma technique, will be shortly reviewed. Possible combinations with novel concepts to convert the solar spectrum will be addressed. Recently, we also introduced plasma assisted atomic layer deposition of Al2O3, a high k dielectric containing a large amount of negative charge, to passivate future p-type emitters on n-type silicon based solar cells. Demonstration of improved performance of n-type solar cells using this type of passivation layer with an efficiency as high 23.2 % will be discussed. To obtain the required large scale by 2050 further improvement of thin film solar cell technology will be essential, both in terms of materials as well as in terms of processes. Apart from the need for high throughput deposition of the photo-active materials, additional thin film technologies will be needed for barrier layers on substrates to limit impurity transport, for efficient light trapping (textured surfaces and anti-reflection layers) and last but not least encapsulation layers to guarantee the lifetime of the thin film solar cell. Apart from the further development of improved materials and device concepts, process monitoring and control to improve quality and throughput becomes more and more important. I will discuss here the monitoring of high rate deposition of microcrystalline silicon by means of optical emission spectroscopy. This optical probing method also enables the in situ detection of the crystallinity of the material deposited as well as fundamental insights in the growth mechanism.