AVS 54th International Symposium
    Thin Film Tuesday Sessions

Session TF-TuA
Surface Chemistry for Atomic Layer Deposition

Tuesday, October 16, 2007, 1:40 pm, Room 613/614
Moderator: S. Rossnagel, IBM

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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

1:40pm TF-TuA1
Infrared Characterization of Atomic Layer Deposition and Post Annealing of Lanthanum Oxide Films
J. Kwon, M. Dai, Rutgers University, E. Langereis, Eindhoven University of Technology, The Netherlands, Y.J. Chabal, Rutgers University, K. Kim, R. Gordon, Harvard University
2:00pm TF-TuA2
Understanding the Long Nucleation Period for Pd ALD on Alumina Substrates
D.N. Goldstein, S.M. George, University of Colorado
2:40pm TF-TuA4 Invited Paper
Simulations of the Surface Chemistry of HfO2 Atomic Layer Deposition
C.B. Musgrave, A. Mukhopadhyay, Stanford University, J.F. Sanz, Universidad de Sevilla, Spain
4:00pm TF-TuA8
Passivation and Atomic Layer Deposition on Halide-Terminated Ge Surfaces
P. Ardalan, C.B. Musgrave, S.F. Bent, Stanford University
4:20pm TF-TuA9
Step by step in-situ X-ray Photoelectron Spectroscopy Investigation on ALD Al2O3 Films using TMA and Water
K.J. Choi, University of Texas at Dallas, S.J. McDonnell, Dublin City University, Ireland, R.M. Wallace, J. Kim, University of Texas at Dallas
4:40pm TF-TuA10
Multi-Scale Simulation of High-κ Gate Dielectrics Deposited by Atomic Layer Deposition
Z. Hu, C.H. Turner, The University of Alabama
5:00pm TF-TuA11
Branched Interfacial Organic Layers: Controlling Nucleation and Growth of Thin Films
M. Sharma, A. Dube, K.J. Hughes, J.R. Engstrom, Cornell University