AVS 54th International Symposium | |
Thin Film | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
1:40pm | TF-TuA1 Infrared Characterization of Atomic Layer Deposition and Post Annealing of Lanthanum Oxide Films J. Kwon, M. Dai, Rutgers University, E. Langereis, Eindhoven University of Technology, The Netherlands, Y.J. Chabal, Rutgers University, K. Kim, R. Gordon, Harvard University |
2:00pm | TF-TuA2 Understanding the Long Nucleation Period for Pd ALD on Alumina Substrates D.N. Goldstein, S.M. George, University of Colorado |
2:40pm | TF-TuA4 Invited Paper Simulations of the Surface Chemistry of HfO2 Atomic Layer Deposition C.B. Musgrave, A. Mukhopadhyay, Stanford University, J.F. Sanz, Universidad de Sevilla, Spain |
4:00pm | TF-TuA8 Passivation and Atomic Layer Deposition on Halide-Terminated Ge Surfaces P. Ardalan, C.B. Musgrave, S.F. Bent, Stanford University |
4:20pm | TF-TuA9 Step by step in-situ X-ray Photoelectron Spectroscopy Investigation on ALD Al2O3 Films using TMA and Water K.J. Choi, University of Texas at Dallas, S.J. McDonnell, Dublin City University, Ireland, R.M. Wallace, J. Kim, University of Texas at Dallas |
4:40pm | TF-TuA10 Multi-Scale Simulation of High-κ Gate Dielectrics Deposited by Atomic Layer Deposition Z. Hu, C.H. Turner, The University of Alabama |
5:00pm | TF-TuA11 Branched Interfacial Organic Layers: Controlling Nucleation and Growth of Thin Films M. Sharma, A. Dube, K.J. Hughes, J.R. Engstrom, Cornell University |