AVS 54th International Symposium | |
Thin Film | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | TF-ThM1 Invited Paper Superconductivity in Very Clean and Doped MgB2 Thin Films Q. Li, A.V. Pogrebnyakov, J.M. Redwing, X.X. Xi, Pennsylvania State University |
8:40am | TF-ThM3 Optical Radiation Selective Devices Based on III Nitrides D. Starikov, J.C. Boney, P. Misra, N. Medelci, R. Pillai, University of Houston |
9:00am | TF-ThM4 EXAFS Study of Local Bonding Structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7 with Bond Constraint Analysis D.A. Baker, G. Lucovsky, M.A. Paesler, North Carolina State University, P.C. Taylor, Colorado School of Mines |
9:20am | TF-ThM5 CVD of Ru from C6H8Ru(CO)3 T.S. Lazarz, Y. Yang, N. Kumar, W. Noh, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana-Champaign |
9:40am | TF-ThM6 The Properties of Ultra Thin Ru-P Amorphous Films Deposited with Ru3(CO)12 and P(CH3)3 for Cu Metallization J. Shin, H. Kim, L.B. Henderson, G.S. Hwang, J.G. Ekerdt, University of Texas at Austin |
10:00am | TF-ThM7 Surface Morphology of Epitaxial Cu Layers: The Effect of Roughness on Electron Scattering J.M. Purswani, D. Gall, Rensselaer Polytechnic Institute |
10:20am | TF-ThM8 Investigation of Ru-Ta-N Ultrathin Films as Diffusion Barrier for Cu Metallization C.-W. Chen, J.-S. Chen, National Cheng Kung University, Taiwan |
10:40am | TF-ThM9 A Study on the Amorphous Ta-Zr Films as Diffusion Barrier in Cu Metallization C. Li, Nanyang Technological University, Singapore, J. Hsieh, Ming-Chi University of Technology, Taiwan |