| AVS 54th International Symposium | |
| Tribology | Wednesday Sessions |
| Session TR1+MN-WeA |
| Session: | Surfaces and Interfaces in MEMS |
| Presenter: | S.B. Shim, Seoul National University, Korea |
| Authors: | S.B. Shim, Seoul National University, Korea S.W. Cho, Seoul National University, Korea N. Kim, Korea Research Institute of Standards and Science J. Kim, Korea Research Institute of Standards and Science Y.D. Park, Seoul National University, Korea |
| Correspondent: | Click to Email |
We report on the mechanical properties of single crystalline GaAs doubly-clamped beam resonator structures characterized by magnetomotive techniques in millikelvin temperatures. Clean nanomechanical GaAs resonators are realized from a lattice-matched GaAs/InGaP/GaAs heterostructures without plasma etching processing with typical quality (Q) factor of ~ 17,400 at 45 mK with resonance frequency of 15.816 MHz. We find dissipation (Q-1) to have weak temperature dependence (~T0.32) as compared to Si nanomechanical resonators of similar size (~T0.36).1 Furthermore, we find shift in the resonance frequency as function of temperature to be nontrivial with a crossover behavior (i.e. at low temperatures shift in the resonance frequency is positive with increasing temperature and at high temperature (T > ~1 K), negative). Such observations are similar to those observed in sound attenuation experiments in disordered glass systems.2 We will also discuss other possible dissipation mechanisms as well as the effect of differing surface conditions and treatments.
1G. Zolfagharkhani et al., PRB 72, (2005).
2W.A. Phillips, Rep. Prog. Phys. 50, 1657 (1987).