Paper TF-WeM13
Properties of Nano-Crystalline Silicon Grown by Internal Linear Antenna-Inductively Coupled Plasma-type Plasma-Enhanced Chemical Vapor Deposition

Wednesday, October 17, 2007, 12:00 pm, Room 613/614

Considerable attentions have been paid to hydrogenated nano-crystalline silicon film deposited a low temperature because of its promising application to stable high efficient solar cell, thin film transistors, and color sensors. In particular, the development of nano-crystalline silicon film is one of the key issues in developing active matrix liquid crystal displays (AMLCD) and active matrix organic light emitting displays (AMOLED). For this purpose, good field effect mobility in the range of 2~5cm²/Vs is required to have high quality resolution displays along with higher stability than amorphous silicon thin films due to the less hydrogen bonded to silicon in the film. In this study, nano-crystalline silicon was deposited using an internal-type inductively coupled plasma (ICP) source, and the properties of the nano-crystalline silicon were investigated as a function of operating pressure, SiH₄/H₂ gas mixture, additive gas, etc. Especially, the effect of initial nucleation condition by controlling gas combination on the crystalline size and crystalline percentage was investigated. The crystallinity and orientation of the deposited hydrogenated silicon thin film was estimated by using micro-Raman spectroscopy (Invia Basic Renisaw) and a high-resolution X-ray diffraction (HRXRD, D8 Discover Bruker). The dark conductivity was calculated by using the I-V characteristics of the films. Field effect mobilities were measured by the fabricated thin film trasnsistors. At the temperature lower than 200°C, nano-crystalline having the size of 30nm could be deposited and the volume fraction of the crystalline calculated by the Raman spectroscopy was higher than 40%. In the presentation, more detailed characteristics of nano-crystalline film deposited by the internal linear ICP film will be discussed.