| AVS 54th International Symposium | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | J.M. Burst, Vanderbilt University |
| Authors: | J.M. Burst, Vanderbilt University B.W. Schmidt, Vanderbilt University N.D. Vora, Vanderbilt University R.D. Geil, Vanderbilt University S.K. Dixit, Vanderbilt University R. Schrimpf, Vanderbilt University B.R. Rogers, Vanderbilt University |
| Correspondent: | Click to Email |
HfO2 and ZrO2 ceramics find use in many diverse applications. Hafnia has broad usefulness in protective coatings, optical thin films, and the technologically important MOS gate dielectric. Zirconia is studied for its thermal barrier, catalytic, optical and electronic applications. Much previous work has either focused on measuring a specific material property as a function of processing, or measured radiation-induced effects without much accountability given towards material processing. Here we report on the chemical, physical, optical and electrical properties of MOCVD-grown thin hafnia and zirconia films and relate their performance to their surface, interfacial and processing conditions. We combine fundamental and application-specific analyses such as in situ Spectroscopic Ellipsometry, X-Ray Photoelectron Spectroscopy (XPS), Medium Energy Backscattering Spectrometry (MEBS) and electron microscopy with surface roughness and Capacitance-Voltage measurements both before and after radiation exposure.