| AVS 54th International Symposium | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | Y. Watanabe, National Defense Academy, Japan |
| Authors: | M. Aono, National Defense Academy, Japan H. Akiyoshi, National Defense Academy, Japan N. Kitazawa, National Defense Academy, Japan Y. Watanabe, National Defense Academy, Japan |
| Correspondent: | Click to Email |
Amorphous carbon nitride (a-CNx) thin films were deposited on silicon single crystal and fused silica substrates by rf-reactive sputtering method using a graphite target and the effect of the substrate temperatures on film properties has been studied. The substrate temperature was varied from room temperature to 873 K. Film composition and their chemical bonding states were analyzed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). Film hardness was measured by nano-indentation method using a Berkovich diamond tip and the maximum load was kept at 1 mN. XPS studies show that the decreasing tendency in the composition ratio of carbon to nitrogen in a-CNx films with the substrate temperature is observed, but the bonding fraction of nitrogen and sp3-carbon increases with the substrate temperature. The D-peak position obtained from Raman spectroscopy shifts to high wave number with the substrate temperature. The nano-indentation tests reveal that the film hardness increases from 2 to 12 GPa as the substrate temperature increases from RT to 823 K. These results suggest that the film hardness is closely related to the bonding states between carbon and nitrogen. The effect of the substrate temperature on other properties will be discussed.