| AVS 54th International Symposium | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | S.U. Lee, Sungkyunkwan University, Korea |
| Authors: | S.U. Lee, Sungkyunkwan University, Korea W.S. Choi, Sungkyunkwan University, Korea B. Hong, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Tin oxide (SnO2) have been widely used as transparent conducting thin film material for application in various fields such as liquid crystal displays, optoelectronic devices, solar cells, heat mirrors and gas sensors, etc.1 Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive transparent conducting oxide (TCO) materials. Antimony-doped tin oxide films (ATO) show the best thermal and chemical stability than other TCO films such as Al-doped zinc oxide (ZnO) and tin-doped In2O3 (ITO). Moreover, the production cost of ATO films is cheaper than other TCO materials. However its resistivity is still unsatisfactory. So, in this work, we investigated the effect of annealing treatment on the resistivity variation of the ATO films. Tin oxide films doped with antimony (Sb) of 6 wt% were deposited on 7059 corning glass by RF magnetron sputtering methods for the application to transparent electrodes. The synthesized ATO films were annealed at temperatures ranging from 300 to 600 oC in steps of 100 oC using RTA equipment in oxygen and nitrogen ambient, respectively. We measured and compared the properties of the post annealed ATO films using structural, electrical and optical methods as a function of the annealing temperature.
1A.V. Tadeev, G. Delabouglise, M. Labeau, Thin Solid Films 337 (1999) 163.