AVS 54th International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP14
Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films

Tuesday, October 16, 2007, 6:00 pm, Room 4C

Session: Aspects of Thin Films Poster Session
Presenter: D.N. Hebert, University of Illinois at Urbana-Champaign
Authors: D.N. Hebert, University of Illinois at Urbana-Champaign
A.J. Hall, University of Illinois at Urbana-Champaign
A. Rockett, University of Illinois at Urbana-Champaign
Correspondent: Click to Email

Cu(In,Ga)Se2 (CIGS) and related materials yield the highest performance thin film solar cells and show excellent promise for very high efficiency multijunction devices if adequate single junction devices can be produced. However, intrinsic defect chemistry and the origin of band edge fluctuations are not understood and are likely responsible for limited device performance. Low-temperature, long-wavelength photoluminescence excitation (PLE) spectra of films with varying composition, growth temperature, substrate orientation and crystallinity are presented. Despite low excitation power, low-temperature, long-wavelength PLE measurements allow for the detection of luminescence by selective wavelength excitation and reveal sub-gap absorption bands. Position-dependent photoluminescence spectra acquired from epitaxial bicrystals and apertured photoluminescence spectra on device-grade polycrystals are also presented. Local area scanning tunneling microscopy band edge measurements on in situ cleaved and sputtered CIGS are used to interpret PL results.