| AVS 54th International Symposium | |
| Surface Science | Tuesday Sessions |
| Session SS2-TuA |
| Session: | Excitations at Surfaces |
| Presenter: | K.R. Shepperd, Georgia Institute of Technology |
| Authors: | K.R. Shepperd, Georgia Institute of Technology T. Li, Georgia Institute of Technology P.N. First, Georgia Institute of Technology T.M. Orlando, Georgia Institute of Technology |
| Correspondent: | Click to Email |
The interaction of hydrocarbons with Si surfaces is a topic of wide interest. This is generally related to the technological importance of SiC and the growing interest in graphene. In an effort to grow SiC interfaces and graphene overlayers, we have investigated the interaction of C2H2 (C2D2) with Si(111) surfaces and the low-energy electron-beam induced chemistry of this adsorbate-substrate system. We monitor the production and release of hydrogen using sensitive and selective resonance enhanced multiphoton ionization laser detection schemes. We have measured the threshold energy and the yield vs. incident electron energy. We discuss the structure in the yields vs. energy in terms of direct dissociative excitations and dissociative electron attachment. We also have investigated the remaining carbon deposit using Auger electron spectroscopy, scanning electron and scanning tunneling microscopy. Initial results indicate facile formation of SiC at low coverage but no clear signature of graphene.