| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS2-ThM |
| Session: | Surface Structure of Compound Semiconductors |
| Presenter: | B.D. Thoms, Georgia State University |
| Authors: | R.P. Bhatta, Georgia State University B.D. Thoms, Georgia State University M. Alevli, Georgia State University N. Dietz, Georgia State University |
| Correspondent: | Click to Email |
Thermal desorption of hydrogen from the N-polar InN surface has been studied by acquiring vibrational spectra using high resolution electron energy loss spectroscopy (HREELS). The reductions in intensity of the N-H stretching and bending vibrations in HREEL spectra upon annealing indicated loss of surface hydrogen and was attributed to recombinative desorption. Annealing to 375 °C for 15 min resulted in a small amount of hydrogen desorption while heating to 425 °C for the same amount of time resulted in complete removal of surface hydrogen. A shorter anneal time of 30 s raised the temperatures for both the onset and completion of desorption by about 50 °C. Since temperatures are typically 500 °C or greater for many of the common growth techniques, this result indicates that desorption of surface hydrogen is occurring during growth and may be an important mechanism for the production of reactive sites during the growth of InN. In addition to the desorption of hydrogen, an increase in the carrier concentration of the film was also observed upon annealing to 475 °C or higher as shown by a shift of the conduction band plasmon excitation to higher energy .