| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS2-ThM |
| Session: | Surface Structure of Compound Semiconductors |
| Presenter: | G. Durkaya, Georgia State University |
| Authors: | G. Durkaya, Georgia State University M. Alevli, Georgia State University R. Atalay, Georgia State University W. Fenwick, Georgia Institute of Technology I. Ferguson, Georgia Institute of Technology N. Dietz, Georgia State University |
| Correspondent: | Click to Email |
InN, a promising group III-nitride material for development of advanced optoelectronic structures, has still many not understood growth specific physical properties. InN layers investigated in the contribution were grown by high-pressure chemical vapor deposition (HPCVD) method, a technique that has been developed to counter the vast different partial pressures in this material system. In this study, we utilize and correlate Raman, XRD and AFM data to analyze the structural and electrical properties of the InN layers. The line shape analysis of the InN E2(high) Raman line is correlated to the crystalline quality of the layers and compared with the XRD pattern and AFM surface morphology studies for various growth conditions. The Raman line shapes for the A1(LO) phonon mode in these layers are analyzed and fitted to theoretical simulations in order to provide an estimate on the free electron concentration. The estimates are linked to results obtained by IR reflectance spectroscopy.