| AVS 54th International Symposium | |
| Surface Science | Monday Sessions |
| Session SS2-MoM |
| Session: | Surface Structure, Growth, and Etching of Silicon and Germanium |
| Presenter: | A.A. Khajetoorians, The University of Texas at Austin |
| Authors: | A.A. Khajetoorians, The University of Texas at Austin H. Eisele, The University of Texas at Austin S.Y. Qin, The University of Texas at Austin C.-K. Shih, The University of Texas at Austin |
| Correspondent: | Click to Email |
Epitaxial thin Pb films on Si(111) are well known to exhibit pronounced QSE manifested by the phase matching of the Fermi wavelength and the layer thickness, giving rise to bilayer oscillation as well as a re-entrant quantum beats of longer periodicity. Such quantum oscillation phenomena have been observed in preferred film thickness, the location of quantum well states, as well as superconductivity. This work reveals yet another intriguing phenomenon manifested by the QSE: Formation of a novel superstructure resulting from the interplay of the quantum well state of the metal film and the cesium adsorbates at the interface of Si(111) substrate and Pb thin film overlayers. The superstructure consists of a periodicity of about 8 nm, incommensurate with the Si(111) 7x7 periodicity. Moreover, there is a dependence of the actual periodicity and orientation on the film thickness. This work is supported is supported by: IGERT-NSF: DGE-054917; FRG: (DMR-0306239, DMR-0606485), Alexander von Humboldt Foundation.