| AVS 54th International Symposium | |
| Surface Science | Monday Sessions |
| Session SS2-MoM |
| Session: | Surface Structure, Growth, and Etching of Silicon and Germanium |
| Presenter: | Y. Cui, University of Toronto, Canada |
| Authors: | Y. Cui, University of Toronto, Canada J. Nogami, University of Toronto, Canada |
| Correspondent: | Click to Email |
The growth of Calcium Fluoride (CaF2) on Silicon has been widely studied since it grows epitaxially on Si with small lattice mismatch (0.6% at room temperature). There is an extensive literature on CaF2 growth on Si(111) where a natural epitaxial relationship results in flat thin films with low defect density. However, very little work has been reported for CaF2 on Si(001). It is known that CaF2 grown on Si(001) forms either compact islands or long ridges in the Stranski-Krastanow mode.1,2 STM images of the wetting layer show an inhomogeneous row like structure.3 In this STM study, 2x3 or 2x4 periodicities were identified in the first layer depending on CaF2 coverage and growth temperature. The LEED pattern shows an unusual combination of spots and streaks with variable line width and intensity. The configuration of the pattern is caused by the alignment of surface unit cells and phase disorder. The nucleation of CaF2 small areas is also seen and paves a way to further studies on 3D insulator nanowires. Finally the parallels between these results and the ones obtained for growth of CaF2 on Si(111) is discussed.
1 Loretto, D.; Ross, F.M.; Lucas, C.A.: Applied Physics Letters, v 68, n 17, 22 April 1996, p 2363-5
2 Pasquali, L.; D'Addato, S.; Selevaggi, G.; Nannarone, S.; Sokolov, N.S.; Suturin, S.M.; Zogg, H.: Nanotechnology, v 12, n 4, Dec. 2001, p 403-8
3 Sumiya, T.; Miura, T.; Fujinuma, H.; Tanaka, S.: Surface Science, v 376, n 1-3, 10 April 1997, p 192-204.