AVS 54th International Symposium
    Surface Science Wednesday Sessions
       Session SS2+EM+TF-WeM

Paper SS2+EM+TF-WeM11
Irradiation-Promoted Exchange Reaction: A New Approach to the Fabrication of Heterogeneous Self-Assembled Monolayers and Chemical Lithography

Wednesday, October 17, 2007, 11:20 am, Room 611

Session: SAMs and Organic Films I
Presenter: N. Ballav, Universität Heidelberg, Germany
Authors: N. Ballav, Universität Heidelberg, Germany
T. Weidner, Universität Heidelberg, Germany
M. Zharnikov, Universität Heidelberg, Germany
Correspondent: Click to Email

Self-assembled monolayers (SAMs) can undergo an exchange reaction with the molecules capable of building a SAM on the same substrate upon the immersion into the respective solution. However, for most systems, the exchange reaction is very slow and incomplete at normal conditions, taking from days to weeks and occurring to a limited extent only. Using several different model systems, we show that the rate and extent of the exchange reaction can be significantly enhanced and even precisely tuned by either electron irradiation with a small dose or exposure to UV light. We assume that both electron and UV irradiation result in the appearance of structural and chemical defects in the target SAM, which promote the molecular exchange. The effect of irradiation and the parameters of the exchange reaction were monitored in detail and correlated with each other using several complementary experimental techniques. The developed approach, irradiation-promoted exchange reaction, can be considered as a platform for the preparation of heterogeneous mixed SAMs. Also, in combination with e-beam or UV-lithography, this method can be used for the fabrication of chemical patterns, including gradient ones. In this regard, the approach is similar to conventional photography: a desired pattern is initially written by electron or UV beam and later “developed” upon its immersion into the solution of a molecular substituent. There are no principal limitations for the form of the fabricated features while the characteristic length scale can be varied in a broad range from centimetres to several tens of nanometers.