| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS2+EM+TF-ThA |
| Session: | Organics and Carbon Films on Silicon |
| Presenter: | D. Oh, Georgia Institute of Technology |
| Authors: | D. Oh, Georgia Institute of Technology H. Abernathy, Georgia Institute of Technology N. Sharma, Georgia Institute of Technology P.N. First, Georgia Institute of Technology M. Liu, Georgia Institute of Technology T.M. Orlando, Georgia Institute of Technology |
| Correspondent: | Click to Email |
There is currently keen interest in developing good strategies for the growth of a few layers of graphite or graphene on substrates such as Si. We are exploring the use of low-energy electron induced dissociation of adsorbed benzene, naphthalene and phenylacetylene in the production of graphite/graphene films with good lateral heterogeneity. In this study, benzene, naphthalene or phenylacetylene is chemisorbed onto reconstructed Si(111)-7×7 surfaces. These adsorbates are fragmented via low-energy electron bombardment at energies which are dominated by dissociative electron attachment resonances. In general, the incident electron beam can be captured by low-lying π* states of the chemical precursors and can lead to controlled dissociation and the formation of reactive radicals and negative ions. These fragments can then react to form a network structure of predominantly sp2 hybridization. The deposited carbon overlayer is examined with Auger electron spectroscopy, Raman spectroscopy and scanning tunneling microscopy. The quality of the deposit and the viability of this non-thermal growth strategy will be discussed.